Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E IT:E TR | Dynamic random access memory | DEX 32 inches the device provides 6 bits

the device provides 6 bits of the CRC remainder

Xilinx Field Programmable Gate Array Part #XCKU15P-L2FFVA1156E

Bus System Interface Type: 64-bit/66MHz PCI

Xilinx Field Programmable Gate Array Part #XCZU9EG-1FFVB1156E

Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E IT:E TR | Dynamic random access memory | DEX 32 inches the device provides 6 bitsMicron Technology DRAM SDRAM DDR4, Part #: MT40A512M16LY 062E IT: E TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose