Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G16KH-062E AIT:E | Dynamic random access memory | DEX REN G-M 302 TSSA MASTER PG1

G-M 302 TSSA MASTER PG1 KP-38892

8 internal banks (x16): 2 groups of 4 banks each

and wireless handsets

NOT IATA RESTRICTED AS PER SP A158

Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G16KH-062E AIT:E | Dynamic random access memory | DEX REN G-M 302 TSSA MASTER PG1Micron Technology DRAM SDRAM DDR4, Part #: MT40A1G16KH 062E AIT: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV, +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms, at 40C to 85C 32ms, at >85C to 95C 16ms, at >95C to 105C 8ms, at >105C to 125C 16 internal banks (x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch