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TPS61240DRVR
Model: XW8400
The polarity independence and minimal power requirement allows these devices to easily replace reed switches for superior reliability and ease of manufacturing
Multiple BCM56450 devices can be connected together using the stacking links to create high port density systems
Micron Technology DRAM SDRAM-DDR4, Part #: MT41K512M8DA-107:P TR | Dynamic random access memory | DEX MAMMOGRAPHY TPS61240DRVRMicron Technology DRAM SDRAM DDR3L, Part #: MT41K512M8DA 107: P TR features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS
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