Micron Technology DRAM SDRAM-DDR4, Part #: MT47H128M16RT-25E:C TR | Dynamic random access memory | DEX Nichicon ease of use: fixed unity

ease of use: fixed unity gain configuration

Xilinx Field Programmable Gate Array Part #XCKU9P-L1FFVE900I

Xiilnx FPGA Part #XCKU060-1FFVA1156C

In 100G mode

Micron Technology DRAM SDRAM-DDR4, Part #: MT47H128M16RT-25E:C TR | Dynamic random access memory | DEX Nichicon ease of use: fixed unityMicron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E: C TR features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ