Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E IT:E TR | Dynamic random access memory | DEX GE Power converter ASM MT52L256M64D2LZ-107 WT:B

MT52L256M64D2LZ-107 WT:B

Part #: MT40A256M16LY-062E IT:F TR features: • VDD = VDDQ = 1

50 masks per box

Data Converters: A/D 16x10b

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E IT:E TR | Dynamic random access memory | DEX GE Power converter ASM MT52L256M64D2LZ-107 WT:BMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E IT: E TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose