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ASSEMBLY - RF INTERFACE
the FM25L04B performs write operations at bus speed
1700V 450A 3-PHASE FS450R17KE3 W/DRIVER 2250W
Bus Speed8 GT/s
Micron Technology DRAM , Part #MT41K128M16JT-125 XIT:K TR | Dynamic random access memory | DEX 14"-15" ASSEMBLY - RF INTERFACEMicron Technology DRAM SDRAM DDR3L, Part #MT41K128M16JT 125 XIT: K TR Features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL)
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