Micron Technology DRAM SDRAMMobile-, Part #: MT41K256M16TW-107 AIT:P | Dynamic random access memory | DEX Headlamps JEDEC-standard ball-out

JEDEC-standard ball-out

MIL:MT40A1G8SA-062E AAT E

Compatible with 5308759

8192 cycle refresh at 0°C to 85°C – 32ms

Micron Technology DRAM SDRAMMobile-, Part #: MT41K256M16TW-107 AIT:P | Dynamic random access memory | DEX Headlamps JEDEC-standard ball-outMicron Technology DRAM SDRAM DDR3L, Part #: MT41K256M16TW 107 AIT: P features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS